Enhanced Shift Currents in Monolayer 2D GeS and SnS by Strain-Induced Band Gap Engineering
نویسندگان
چکیده
منابع مشابه
Quasiparticle band structures and interface physics of SnS and GeS
We perform first-principles, density-functional-theory calculations of the electronic structure for the layered bulk materials SnS and GeS which are of interest for photovoltaic applications. Band gap corrections are computed within the GW approximation to the electron self-energy. The resulting quasiparticle gaps in both SnS and GeS are in excellent agreement with the majority of existing expe...
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ژورنال
عنوان ژورنال: ACS Omega
سال: 2020
ISSN: 2470-1343,2470-1343
DOI: 10.1021/acsomega.0c01319